File:80 nm pitch contact.jpg
Summary
| Description |
English: Top: Mask layout for 6% transmission attenuated phase-shift mask. Bottom: Corresponding top-down image at wafer level. The targeted pattern is a dense contact hole array where the feature repeats every 80 nm in x and y on the wafer. The image is formed with optimized polarized cross-pole illumination on a 193 nm immersion tool (1.3 NA). An interesting aspect of this pattern is that it has reduced sensitivity to small variations of the mask feature width. While the imaging process here benefits from reduced sensitivity to focus and mask CD error factors, the sensitivity to dose errors is very strong, due to the significant presence of unmodulated light in the background of the exposure. This prevents areas of destructive interference from being completely dark. The normalized image log-slope is equal to 1.0. |
| Date | 6 November 2007 (original upload date); 29 May 2008 (last version) |
| Source | Transferred from en.wikipedia to Commons by User:Cepheiden using CommonsHelper. |
| Author | Guiding light at en.wikipedia / Later version(s) were uploaded by Oleg Alexandrov at en.wikipedia. |
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Licensing
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
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Original upload log
The original description page was here. All following user names refer to en.wikipedia.
- 2008-05-29 10:27 Guiding light 250×453× (22170 bytes)
- 2008-05-29 08:21 Guiding light 640×512× (27565 bytes) Top: Mask layout for 6% transmission attenuated phase-shift mask. Bottom: Corresponding top-down image at wafer level. The targeted pattern is a dense contact hole array where the feature repeats every 80 nm in x and y on the wafer. The image is formed wi
- 2007-11-06 04:55 Oleg Alexandrov 232×448× (29341 bytes) Crop and put images one under another to look better. Same license.
- 2007-11-06 02:25 Guiding light 640×512× (28787 bytes) Left: Mask layout for 6% transmission attenuated phase-shift mask. Right: Corresponding top-down image at wafer level. The targeted pattern is a dense contact hole array where the feature repeats every 80 nm in x and y on the wafer. The image is formed wi